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dc.contributor.authorIsacfranklin, Melkiyur
dc.contributor.authorRathinam, Yuvakkumar
dc.contributor.authorGanesan, Ravi
dc.contributor.authorVelauthapillai, Dhayalan
dc.date.accessioned2023-09-07T12:46:53Z
dc.date.available2023-09-07T12:46:53Z
dc.date.created2023-05-16T14:06:54Z
dc.date.issued2023
dc.identifier.citationACS Omega. 2023, 8 (13), 11700-11708.en_US
dc.identifier.issn2470-1343
dc.identifier.urihttps://hdl.handle.net/11250/3087945
dc.description.abstractIn the modern civilized world, energy scarcity and associated environmental pollution are the center of focus in the search for reliable energy storage and harvesting devices. The need to develop cheaper and more competent binder-free electrodes for high-performance supercapacitors has attracted considerable research attention. In this study, two different procedures are followed to enhance the growth of carbon nanotubes (CNT-E and CNT-NF) directly coated on a Ni-foam substrate by a well-functioning chemical vapor deposition (CVD) method. Thus, directly grown optimized CNT electrodes are used as electrodes for electrochemical devices. Furthermore, solid-state symmetric supercapacitors are fabricated using CNT-NF//CNT-NF, and fruitful results are obtained with maximum specific capacitance (250.51 F/g), energy density (68.19 Wh/kg), and power density (2799.77 W/kg) at 1 A/g current density. The device exhibited good cyclic stability, with 92.42% capacitive retention and 99.68% Coulombic efficiency at 10 000 cycles, indicating the suitability of the electrodes for practical applications. This study emphasizes the importance of studying the direct growth of binder-free CNT electrodes to understand the actual behavior of electrodes and the proper storage mechanism.en_US
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleDirect Growth of Binder-Free CNTs on a Nickel Foam Substrate for Highly Efficient Symmetric Supercapacitorsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© 2022 The Authorsen_US
dc.source.pagenumber11700-11708en_US
dc.source.volume8en_US
dc.source.journalACS Omegaen_US
dc.source.issue13en_US
dc.identifier.doi10.1021/acsomega.2c04998
dc.identifier.cristin2147853
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
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