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dc.contributor.authorRajaramanan, Tharmakularasa
dc.contributor.authorVelauthapillai, Dhayalan
dc.contributor.authorRavirajan, Punniamoorthy
dc.contributor.authorSenthilnanthanan, Meena
dc.date.accessioned2023-06-16T13:18:49Z
dc.date.available2023-06-16T13:18:49Z
dc.date.created2023-05-03T22:00:28Z
dc.date.issued2023
dc.identifier.issn0957-4522
dc.identifier.urihttps://hdl.handle.net/11250/3071837
dc.description.abstractThis study reports a facile impregnation method for synthesizing Ni-doped TiO2 nanomaterials using P25-TiO2 as a starting material. The as prepared nanomaterials were subjected to structural and optical characterizations and subsequently employed in photovoltaic studies. X-ray diffraction (XRD) and Raman studies confirmed that Ni doping did not alter the anatase and rutile contents of P25-TiO2. Also, the presence of the constituent dopants and their ionic states were confirmed by Energy-Dispersive X-ray (EDX) and X-ray photoelectron (XPS) spectroscopies. Topographic Atomic Force Microscopic (AFM) images illustrated that Ni doping had increased the surface roughness of the TiO2. Optical characterization by UV-Visible spectroscopy revealed that the Ni doping had caused red shift in light absorption due to reduced TiO2 bandgap and improved the dye adsorption on TiO2 films. Then, the photocurrent–photovoltage property of the fabricated devices was investigated and the optimized 0.10 wt% Ni-doped TiO2 photoanode based device exhibited pronounced power conversion efficiency (PCE) of 6.29% under air mass (AM) 1.5 conditions (100 mWcm−2, 1 sun). Improved charge transport properties were also observed by the electrochemical impedance spectroscopic (EIS) study for the device with optimized Ni-doped TiO2 compared to the control device.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleA facile impregnation synthesis of Ni-doped TiO2 nanomaterials for dye-sensitized solar cellsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holderThe Author(s) 2023en_US
dc.source.volume34en_US
dc.source.journalJournal of materials science. Materials in electronicsen_US
dc.source.issue10en_US
dc.identifier.doi10.1007/s10854-023-10347-4
dc.identifier.cristin2145276
dc.relation.projectDirektoratet for internasjonalisering og kvalitetsutvikling i høgare utdanning: NORPART-2016/10237, LKA- 3182/LKA-16/0001en_US
dc.source.articlenumber34en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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