dc.contributor.author | Abiram, Gnanasampanthan | |
dc.contributor.author | Gourji, Fatemeh Heidari | |
dc.contributor.author | Pitchaiya, Selvakumar | |
dc.contributor.author | Ravirajan, Punniamoorthy | |
dc.contributor.author | Murugathas, Thanihaichelvan | |
dc.contributor.author | Velauthapillai, Dhayalan | |
dc.date.accessioned | 2023-03-10T09:43:34Z | |
dc.date.available | 2023-03-10T09:43:34Z | |
dc.date.created | 2022-05-23T08:53:20Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Scientific Reports. 2022, 12 (1), . | en_US |
dc.identifier.issn | 2045-2322 | |
dc.identifier.uri | https://hdl.handle.net/11250/3057618 | |
dc.description.abstract | This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirm the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in the SEM image and was found to be around 412 (± 44) nm, and larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated, under ambient conditions, on heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric. The fabricated Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on-current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2 s−1 V−1 was obtained for the FETs with a channel length of 30 µm, and the hole-mobility was reduced by an order of magnitude (0.012 cm2 s−1 V−1) when the channel length was doubled. The on-current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in FET could be attributed to the much larger grain size of the Cs2AgBiBr6 film made in this work. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Nature Research | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Air processed Cs<inf>2</inf>AgBiBr<inf>6</inf> lead-free double perovskite high-mobility thin-film field-effect transistors | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © The Author(s) 2022 | en_US |
dc.source.pagenumber | 0 | en_US |
dc.source.volume | 12 | en_US |
dc.source.journal | Scientific Reports | en_US |
dc.source.issue | 1 | en_US |
dc.identifier.doi | 10.1038/s41598-022-06319-z | |
dc.identifier.cristin | 2026297 | |
dc.source.articlenumber | 2455 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |