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Effect of doped TiO2 film as electron transport layer for inverted organic solar cell

dc.contributor.authorRanjitha, A
dc.contributor.authorThambidurai, M
dc.contributor.authorShini, Foo
dc.contributor.authorMuthukumarasamy, N
dc.contributor.authorVelauthapillai, Dhayalan
dc.date.accessioned2019-09-24T13:46:36Z
dc.date.available2019-09-24T13:46:36Z
dc.date.created2019-04-06T22:21:17Z
dc.date.issued2019
dc.identifier.citationRanjitha, A., Thambidurai, M., Shini, F., Muthukumarasamy, N., & Velauthapillai, D. (2019). Effect of doped TiO2 film as electron transport layer for inverted organic solar cell. Materials Science for Energy Technologies, 2, 385-388.nb_NO
dc.identifier.issn2589-2991
dc.identifier.urihttp://hdl.handle.net/11250/2618563
dc.description.abstractNanocrystalline TiO2 and Sn-doped TiO2 thin films were prepared by sol–gel spin coating method. The crystallinity and anatase phase of TiO2 and Sn-doped TiO2 were confirmed from X-ray diffraction analysis. The EDAX analysis also confirmed the presence of tin, oxygen and titania elements. By fabricating an inverted organic solar cell with device configuration of ITO/Sn-doped TiO2/active layer/MoO3/Al, power conversion efficiency (PCE) of the Sn-doped TiO2 was observed to be 3.08% compared to the TiO2 based solar cell of 2.64%.nb_NO
dc.language.isoengnb_NO
dc.publisherElseviernb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.subjectdoped TiO2nb_NO
dc.subjectpolymer solar cellsnb_NO
dc.subjectsol–gel methodnb_NO
dc.subjectXRDnb_NO
dc.titleEffect of doped TiO2 film as electron transport layer for inverted organic solar cellnb_NO
dc.typeJournal articlenb_NO
dc.description.versionpublishedVersionnb_NO
dc.rights.holder© 2019 The Authors.nb_NO
dc.subject.nsiVDP::Teknologi: 500::Maskinfag: 570::Maskinteknisk energi- og miljøteknologi: 573nb_NO
dc.source.pagenumber385–388nb_NO
dc.source.volume2nb_NO
dc.source.journalMaterials Science for Energy Technologiesnb_NO
dc.identifier.doi10.1016/j.mset.2019.02.006
dc.identifier.cristin1690617
cristin.unitcode203,12,4,0
cristin.unitnameInstitutt for data- og realfag
cristin.ispublishedtrue
cristin.fulltextoriginal


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